%0 Journal Article
%T Research on short period InAs/GaSb superlattices photoconductors on GaAs substrates<br>GaAs基短周期InAs/GaSb超晶格红外探测器研究
%A guo jie
%A <br>郭杰
%J 红外与毫米波学报
%D 2009
%I Science Press
%X Two type II superlattices (SLs): InAs(2ML)/GaSb(8ML) and InAs(8ML)/GaSb(8ML) were grown on GaAs substrates by molecular-beam epitaxy. High resolution X-ray diffraction showed the period of the two SLs was 33  and 56 . Room-temperature optical transmittance spectra showed clear absorption edge at ~2.1μm and ~5μm for the two SLs. The SWIR and MWIR photoconductor devices were fabricated by standard lithography and etched by tartaric acid solution. The 50% cutoff wavelength of the two photoconductors was 2.1μm and 5.0μm respectively. D*bb was above 5×108 cmHz1/2/W for two kinds of photoconductors at 77K. D*bb was 2×108 cmHz1/2/W for SWIR photoconductor at room temperature.
%K superlattices
%K InAs/GaSb infrared detector
%K MBE
%K spectral response<br>超晶格
%K InAs/GaSb红外探测器
%K 分子束外延
%K 光谱响应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=81F69397BF745BFCFDC6285BAED18B57&yid=DE12191FBD62783C&vid=D3E34374A0D77D7F&iid=38B194292C032A66&sid=31611641D4BB139F&eid=ED01F5AE50BE09C0&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=9