%0 Journal Article
%T HOT ELECTRON EFFECT IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS<br>GaAs／AlGaAs多量子阱结构的热电子效应
%A Wu Huizhen
%A Li Wei
%A Li Zhengzhi
%A <br>吴惠桢 Dawso.
%A P
%J 红外与毫米波学报
%D 1997
%I Science Press
%X Hot electron relaxations in GaAs/AlGaAs multiple quantum wells were studied using photoluminescence excitation (PLE) spectroscopy. LO phonon emissions in the quantum wells were observed. A four band Kane model was built to calculate the deformation of sub valence bands due to the mixing effect of heavy and light hole bands. The deformation affects the measured PLE responses. The measured and calculated results show that photo excited electrons can cascade down to the exciton energy state directly by LO phonon emissions.
%K multiple quantum well
%K excitation spectrum
%K hot electrons
%K phonon scattering<br>多量子阱
%K 激发光谱
%K 热电子
%K 砷化镓
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=76DDD033259936E58575D2985BD14C0C&yid=5370399DC954B911&vid=7801E6FC5AE9020C&iid=0B39A22176CE99FB&sid=C3BF5C58156BEDF0&eid=74011071555EB4E5&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0