%0 Journal Article
%T THE ACCEPTOR PROPERTIES OF UN-INTENTIONALLY DOPED p-TYPE MBE-GROWN Hg1-xCdxTe<br>非掺杂p型MBE—Hg1—xCdxTe材料的受主性质
%A FANG Wei-zheng
%A YANG Jian-rong
%A CHEN Xin-Qiang
%A WANG Shan-Li
%A HE Li
%A <br>方维政
%A 杨建荣
%J 红外与毫米波学报
%D 1998
%I Science Press
%X 对经２５０℃Ｐ型热处理获得的Ｈｇ１－ｘＣｄｘＴｅＭＢＥ材料进行变温霍耳测量和理论拟合计算，由此得到ＨｇＣｄＴｅ－ＭＢＥ材料的受主浓度为２－３×１０＾１６ｃｍ＾－３，残余施主浓度为５×１０＾１５ｃｍ＾－３左右，两才相比显示材料的补偿度较低，拟合得到的汞空位受主能级为１５－１８ｍｅＶdisplay structure
%K MBE
%K HgCdTe
%K annealing<br>分子束外延
%K 碲镉汞
%K 非掺杂
%K p型
%K 受主性质
%K 红外
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=C0C6FA04E1E338E8&yid=8CAA3A429E3EA654&vid=BCA2697F357F2001&iid=CA4FD0336C81A37A&sid=C5154311167311FE&eid=340AC2BF8E7AB4FD&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=4&reference_num=23