%0 Journal Article
%T A NEW TYPE OF ASYMMETRICAL GaAs/GaAlAs QUANTUM WELL INFRARED PHOTOCONDUCTOR<br>新型GaAs／GaAlAs非对称量子阱红外光电导探测器
%A SHI Yan-Li
%A DENG Jun
%A DU Jin-Yu
%A SHEN Guang-Di
%A YIN Jie
%A <br>史衍丽
%A 邓军
%A 杜金玉
%A 沈光地
%A 尹洁
%J 红外与毫米波学报
%D 2000
%I Science Press
%X 提出一种新型GaAs/GaAlAs子带间光吸收的红外光电导探测机理,利用MOCVD系统进行器件材料的生长,研制了200μm×200μm的台面形式单管,测到了明显的红外光电流信号及阱间共振遂穿效应造成的负阻震荡现象,对器件的性能测试结果表明,器件的光电流响应和信噪比随着阱数增加而增加,器件噪声比常规GaAs/GaAlAs量子阱红外探测器低一个数量级.
%K asymmetrical GaAs/GaAlAs quantum well infrared detectors
%K negative conductance oscillation
%K photocurrent
%K signal
%K to
%K noise ratio<br>GaAlAs
%K 非对称量子阱
%K 红外探测器
%K 砷化镓
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=8ABFB2B5831A49BF&yid=9806D0D4EAA9BED3&vid=2A8D03AD8076A2E3&iid=E158A972A605785F&sid=1A363081E1FF7014&eid=4E6F5C60B72D9B1C&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=2