%0 Journal Article
%T QUANTUM EFFICIENCY OPTIMIZATION OF InP-BASED In0.53Ga0.47As PHOTODETECTORS<br>InP基In0.53Ga0.47As光电探测器的量子效率优化
%A TIAN Zhao-Bing
%A GU Yi
%A ZHANG Yong-Gang
%A <br>田招兵
%A 顾溢
%A 张永刚
%J 红外与毫米波学报
%D 2008
%I Science Press
%X A modified physical model on the optical response of InP-based In0.53Ga0.47As PIN photodetectors was presented. By introducing a collecting factor, the optical response and quantum efficiency were simulated. The influences of device parameters on quantum efficiency of typical In0.53Ga0.47As/InP PIN photodetectors under both front and backside illuminated conditions were investigated by using our model. Furthermore, two modified InGaAs/InP PD structures for back-illumination were proposed, and the optimal structural parameters were discussed.
%K short-wave-infrared
%K photovoltaic detectors
%K InGaAs
%K quantum efficiency<br>短波红外
%K 光伏型探测器
%K InGaAs
%K 量子效率
%K short-wave-infrared
%K photovoltaic
%K detectors
%K InGaAs
%K quantum
%K efficiency
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=D849EB832BC8C7E87F66F5AE113DAAA9&yid=67289AFF6305E306&vid=DB817633AA4F79B9&iid=0B39A22176CE99FB&sid=35FC3610259C2B32&eid=CD775AE9DDBD7B53&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=18