%0 Journal Article
%T ANNEALING EFFECTS OF SELF ASSEMBLED InAs/GaAs QUANTUM DOTS<br>自组织生长InAs／GaAs量子点的退火效应
%A WANG Zhi
%A Ming
%A LU Zhen
%A Dong
%A FENG Song
%A Lin
%A ZHAO Qian
%A LI Shu
%A Ying
%A JI Xiu
%A Jiang
%A CHEN Zong
%A Gui
%A XU Zhong
%A Ying
%A ZHENG Hou
%A Zhi
%A <br>王志明
%A 陈宗圭
%J 红外与毫米波学报
%D 1997
%I Science Press
%X The annealing effects of InAs layers with different thicknesses in a GaAs matrix were investigated. The diffusion enhancement by strain, which is well estabished in strained quantum wells, occurs in InAs/GaAs quantum dots(QDs). A shift of the QD luminescence peak towards higher energies results from this enhanced diffusion. When a significant portion of the strain in the structures is relaxed by misfit dislocations, the diffusion becomes negligible, and annealing tends to generate additional dislocations. By these why the QD peak energy is weakly affected and the luminescence intensity decreases could be explained.
%K quantum dots
%K annealing
%K strain
%K diffusion
%K dislocation<br>量子点，退火，应变，扩散，位错
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=76DDD033259936E57243D662F208338A&yid=5370399DC954B911&vid=7801E6FC5AE9020C&iid=B31275AF3241DB2D&sid=366B1248A15658C5&eid=D9202C57BAB9096F&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=2