%0 Journal Article
%T INFRARED PHOTOELASTIC RESEARCH OF SINTERING STRESS IN SILICON THYRISTOR<br>硅晶闸管烧结应力的红外光弹性研究
%A PENG Hai
%A Jing
%A ZHAO Shou
%A Nan
%A <br>彭海鲸
%A 赵寿南
%J 红外与毫米波学报
%D 1998
%I Science Press
%X By referring to the theories of thermoelasticity and thermal interlaminar stress of composite, the stress in silicon wafer and the interlaminar stress of structure Si/Al/Mo used for making thyristor after sintering were analyzed. It was found that the distribution of stress caused by different properties of thermal expansion in the center portion is different from that at the edge of silicon wafer. The expression for stress at the edge of silicon wafer was derived. The stress photoelastic patterns were obtained by means of the infrared photoelastic system. The theory coincides well with the results of experiment.
%K silicon
%K stress
%K sintering
%K photoelasticity
%K thyristor<br>硅
%K 应力
%K 烧结
%K 光弹性
%K 晶闸管
%K 红外光弹性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=2476D26EC4E29E70&yid=8CAA3A429E3EA654&vid=BCA2697F357F2001&iid=CA4FD0336C81A37A&sid=ECE8E54D6034F642&eid=F4B561950EE1D31A&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=1&reference_num=9