%0 Journal Article
%T PHOTOLUMINESCENCE PROPERTIES OF NITROGEN DOPED ZnSe EPILAYERS<br>掺氮ZnSe外延层的光致发光研究
%A ZHU Zuo
%A Ming
%A LIU Nan
%A Zhu
%A LI Guo
%A Hua
%A HAN He
%A Xiang
%A WANG Zhao
%A Ping
%A <br>朱作明
%A 王善中
%J 红外与毫米波学报
%D 1999
%I Science Press
%X The photoluminescence(PL) properties of nitrogen doped ZnSe epilayers grown on semi insulating GaAs(100) substrates by MBE using a rf plasma source for N doping were investigated. The PL peak which can be related to N acceptor was observed in the PL spectra of ZnSe:N smaples. At 10K, as the excitation power density increases, the energy of donor acceptor pair(DAP) emission shows a blue shift and its intensity tends to saturate. As the temperature increases over a range from 10K to 300K, the relative PL intensity of donor bound exciton to that of the acceptor bound exciton increases due to the transfer between two bound excitons.
%K ZnSe:N<br>光致发光
%K 束缚激子
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=87ECCC0913434822C92E4F783719FEB2&yid=B914830F5B1D1078&vid=13553B2D12F347E8&iid=CA4FD0336C81A37A&sid=FC0714F8D2EB605D&eid=13553B2D12F347E8&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=5