%0 Journal Article
%T PHOTOREFLECTANCE AND THERMOREFLECTANCE STUDIES OF STRAINED-LAYER In_(0.2)Ga_(0.8)As/GaAs MULTIPLE QUANTUM WELLS STRUCTURE<br>In_（0．2）Ga_（0．8）As／GaAs应变多量子阱结构的光调制反射和热调制反射谱的研究
%A Chen Chenji
%A Gao Wei
%A Mi Lizhi
%A Hunang Depin
%A Qu Ming
%A <br>陈辰嘉
%A 高蔚
%A 米立志
%A 黄德平
%A 瞿明
%J 红外与毫米波学报
%D 1995
%I Science Press
%X The studies of experimental results in strained In0.2Ga0.8 As/GaAs multiple quantum wells structure by using photoreflectance(PR)and thermoreflectance(TR)techniques at 77K were presented' With a least square' fit of lineshape function,the intersubband transitions in PR spectra can be clearly identified in the multiple quantum wells and compared with an envolope-function calculation. From a comparison of the PR and TR spectra at 77K of a strained InGaAs/GaAs multiple quantum wells structure,it can be confirmed that the first derivative nature of electric field modulation relates to the uncoupled 11H and 13H transitions,and the low field modulation produces a third-derivative line shape related to the coupled states (the tunneling effect between wells).
%K strained multiple quantum wells
%K photoreflectance
%K thermoreflectance
%K coupledstates<br>应变多量子阱，光调制反射谱，热调制反射谱，耦合态
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=8FB7E02098FDAF5F810CE764725932EF&yid=BBCD5003575B2B5F&vid=F3583C8E78166B9E&iid=E158A972A605785F&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0