%0 Journal Article
%T PHOTOLUMINESCENCE STUDY OF EPITAXIAL CdTe/GaAs GROWN BY MBE<br>MBE CdTe／GaAs光致发光研究
%A Chen Shid
%A Lin Li
%A He Xianzhong
%A <br>陈世达
%A 许继宗
%J 红外与毫米波学报
%D 1995
%I Science Press
%X 在１０Ｋ低温下对分子束外延（ＭＢＥ）生长的ＣｄＴｅ（１１１）Ｂ／ＧａＡｓ（１００）／ＣｄＴｅ（２１１）Ｂ／ＧａＡｓ（２１１）Ｂ外延膜进行了光致发光（ＰＬ）测量，得到了ＰＬ谱和带边激子辐射的精细结构．计算得到束缚激子的半峰宽（ＦＷＨＭ）分别为０．２～０．ｓｍｅＶ和１～２ｍｅＶ．实验结果表明外廷膜的质量和生长工艺均良好．
%K CdTe/GaAs
%K MBE
%K photoluminescence<br>分子束外延
%K 光致发光
%K 碲化镉
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=EEE6D8107C7960AA74740FEF7430F2BD&yid=BBCD5003575B2B5F&vid=F3583C8E78166B9E&iid=38B194292C032A66&sid=3A0155B37D8FF829&eid=5D9D6A8FC2C66FD8&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=2