%0 Journal Article
%T EXPERIMENTAL STUDY OF SUBBAND STRUCTURE IN THE INVERSION LAYER OF p-TYPE InSb MOS DEVICE IN THE NON-QUANTUM LIMIT CONDITION<br>非量子限条件下P型InSbMOS结构反型层中子能带实验研究
%A Liu Kun Chu Junhao Ou Haijiang Tang Dingyuan
%A <br>刘坤
%A 褚君浩
%J 红外与毫米波学报
%D 1994
%I Science Press
%X The capacitance-voltage (C-V) characteristic of InSb metal-oxide-semiconductor (MOS) device was measured at 100 K. In the inversion region, the second capacitance plateau was observed for the first time, which can be attributed to the electron filling in the second subband. At the same time, a resonant defect state was found for the first time. By using the previously presented C - V model in the non-quantum limit condition, the subband structure in the inversion layer has been obtained.
%K capacitance spectrscopy
%K resonant defect state
%K subband
%K excited state<br>电容谱
%K 共振缺陷态
%K 子能带
%K 锑化铟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=2B1DB2532F57424AE14CDAF2D2F58A40&yid=3EBE383EEA0A6494&vid=FC0714F8D2EB605D&iid=94C357A881DFC066&sid=F7BB24011DC0D223&eid=315A3D008C6ECFC8&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=8