%0 Journal Article
%T MOVPE GROWTH AND TEM CHARACTERIZATIONS OF GaAs/Al_xGa_(1-x)As SUPERLATTICES
MOVPE生长GaAs/AlxGA1—xAs超晶格及其TEM表征
%A Xu Xiangang
%A Huang Baibiao
%A Ren Hongwen
%A Liu Shiwen
%A Jiang Minhua
%A
徐现刚
%A 黄伯标
%J 红外与毫米波学报
%D 1992
%I Science Press
%X MOVPE growth of GaAs/Al_xGa_(1-x)As superlattices and their applications inrelative photoelectric devices are reported. Epilayer quantum heterostructures are charac-terized by using cross-sectional transmission electron microscopy (XTEM). In SelfElectrooptic Effect Devices (SEED), the superlaltice interfaces are abrupt and the barrierand well layers keep good uniformity. In some High Electron Mobility Transistors(HEMT), superlattices used as buffer layers smooth out the growing surface roughness.
%K MOVPE
%K GaAs/Al_xGa_(1-x)As superlattices
%K XTEM
%K interfaces
%K smoothing effect
MOVPE
%K XTEM
%K 半导体
%K 砷化镓
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=0F2BD501008688697627D58543E5CF5C&yid=F53A2717BDB04D52&vid=708DD6B15D2464E8&iid=0B39A22176CE99FB&sid=12DC19455C3A2FA8&eid=3986B25773CB6C30&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=4