%0 Journal Article
%T INFLUENCE OF MS INTERFACE TRANSPORT ON THE CURRENT-VOLTAGE CHARACTERISTIC OF MCT PV DEVICE<br>MS界面输运特性对碲镉汞光伏器件I—V特性的影响
%A HU Xiao
%A Ning
%A LI Yan
%A Jin
%A FANG Jia
%A Xiong
%A <br>胡晓宁
%A 李言谨
%J 红外与毫米波学报
%D 2001
%I Science Press
%X The influence of MS transport on the current voltage characteristic of MCT PV device was investigated based on the current voltage characteristics of MCT Schottkey barrier. The data of some devices were also discussed.
%K current
%K voltage characteristic
%K M
%K MCT contact
%K MCT PV device<br>I－V特性
%K 金属－碲镉汞接触
%K 碲镉汞光伏器件
%K 红外焦平面器件
%K 界面
%K 输运特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=B1F193792F15C3C1&yid=14E7EF987E4155E6&vid=A04140E723CB732E&iid=38B194292C032A66&sid=31611641D4BB139F&eid=BBF7D98F9BEDEC74&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=8