%0 Journal Article
%T OPTICAL PROPERTIES OF In_xGa_(1-x)As/GaAs STRAINED LAYER QUANTUM-WELLS<br>Inx—Ga1—xAs／GaAs应变量子阱光学性质
%A Li Feng Zhang Yaohui Jiang Desheng
%A <br>李锋
%J 红外与毫米波学报
%D 1994
%I Science Press
%X Structures have been observed in the photoluminescence (PL) and the photoreflectance (PR) spectra of InxGa1-xAs/GaAs (x = 0.1) strained-layer multiple quantum-wells (QWs) grown by molecular-beam epitaxy on GaAs (100)-oriented substrate. The properties of the ground state transitions and the excited state transitions are discussed. The band offset ratio Qc = 0.69 (Qv = 1 - Qc = 0.31) is given based on the analysis of PL, PR experimental results. An important evidence, which indicates that the light holes are confined in the GaAs layer forming a type II superlattice, is provided.
%K InxGa1-xAs/GaAs
%K strained-layered quantum well
%K band offset<br>应变量子阱
%K 能带偏移
%K 砷化镓
%K 光谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=2B1DB2532F57424AC2D9CF7A5D5A3AE5&yid=3EBE383EEA0A6494&vid=FC0714F8D2EB605D&iid=94C357A881DFC066&sid=9D9F10A828991FA6&eid=C7DDDE86E6286CD9&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=6