%0 Journal Article
%T TEMPERATURE DEPENDENCE OF EXCITON LINEWIDTHS IN NARROW GaAs/AlGaAs AND InGaAs/AlGaAs QUANTUM WELLS<br>GaAs／ALGaAs和InGaAs／GaAs窄量子阱中激子线宽与温度的关系
%A 金世荣
%A 徐仲英
%J 红外与毫米波学报
%D 1996
%I Science Press
%X Temperature dependence of exciton linewidths in GaAs/AlGaAs and InGaAs/AlGaAs quantum wells with very narrow well widths was investigated.The increase of the acoustic phonon linear scattering coefficient was found with decreasing well width in low temperature range.The experimental results were discussed.
%K exciton linewidth
%K acoustic phonon scattering
%K semiconductor quantum well<br>激子线宽
%K 声学声子散射
%K 半导体
%K 量子阱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=11E70524797B9E8035705581C82FFFBB&yid=8A15F8B0AA0E5323&vid=23CCDDCD68FFCC2F&iid=E158A972A605785F&sid=6490F0E20C4B41AD&eid=D0182A31A5EB14BA&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=2