%0 Journal Article
%T THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF DIFFUSION OF Zn INTO InP THROUGH InGaAsP<br>通过InGaAsP外延层的InP深Zn扩散理论与实验研究
%A Xiao Deyuan
%A Xu Shaohu
%A Guo Kangjin
%A <br>肖德元
%A 徐少华
%J 红外与毫米波学报
%D 1992
%I Science Press
%X Diffusion of Zn into InP, InGaAsP and InGaAsP/InP single heterostructureshas been studied. The depth of the diffusion front is found to be proportional to the squareroot of the diffusion time. For single heterostructures the junction depth is dependent onthe InGaAsP epilayer thickness x_0, i.e. x_j/t~(1/2)=-x_0/(rt~(1/2))+I, which is very useful inthe fabrication of many electronic and optoelectronic devices where heterostructures areused and Zn diffusion is necessary.
%K Zn diffusion
%K two-boundary diffusion model
%K optoelectronic devices<br>扩散
%K 光电子器件
%K 锌
%K 磷化锢
%K Zn
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=11E2C9AC8C992302C8125A25AA1FED34&yid=F53A2717BDB04D52&vid=708DD6B15D2464E8&iid=0B39A22176CE99FB&sid=EB552E4CFC85690B&eid=04445C1D2BDA24EE&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0