%0 Journal Article
%T THE UNIQUE BEHAVIOR OF FREE-CARRIERS IN N-TYPE DOPED NARROW-GAP HgCdTe<br>窄禁带N型掺杂HgCdTe中自由载流子的奇特性质
%A QIAN DINGRONG
%A <br>钱定榕
%J 红外与毫米波学报
%D 1991
%I Science Press
%X It has been found from our previous studies that there is no Landau damping in N-type doped narrow-gap HgCdTe, which is contrary to the existing theory and experimental fact. The further study on the effect of doping and hence the degeneration on the dispersion relation of energy of free-carriers and the calculation of Lindhard function of free-carriers taking into account this effect show that the absence of Landau damping results from the change of free-carrier behavior caused by the dispersion relation of energy of free-carriers.
%K dielectric function
%K plasma oscillations
%K Landau levels
%K damping<br>HgCdTe
%K 自由载流子
%K 介电函数
%K 掺杂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=456E2C2E22C7C88FCED461FC0804812A&yid=116CB34717B0B183&vid=F3090AE9B60B7ED1&iid=0B39A22176CE99FB&sid=3F0AF5EDBC960DB0&eid=1B97AE5098AEB49C&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=4