%0 Journal Article %T PHOTOLUMINESCENCE STUDIES OF DEFECTS IN GaAa
GaAs中缺陷的光致发光研究 %A Weng Yumin %A Liu Song %A Zong Xiangfu %A
翁渝民 %A 刘松 %J 红外与毫米波学报 %D 1992 %I Science Press %X Deep level defects in undoped semi-insulating GaAs are investigated by photo-luminescence (PL) technique. Several PL emissions related to deep level defects and their behaviors have been observed. The emission band at 0.69eV is due to the well known main mid-gap level EL2 and the 0.77eV PL bands attributable to the transition from the con-duction band to the As_(Ga)donor level. It is suggested that the 1.447eV and 1.32eV PL emis-sions are caused by the double acceptors Ga_(As), with levels 78meV and 203meV above the valence band, respectively. %K photoluminescence %K defects %K semi-insulating GaAs
半绝缘 %K 砷化镓 %K 光致发光 %K 缺陷 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=730D7BC2D9E2DA38A2AC8EB03FA32E95&yid=F53A2717BDB04D52&vid=708DD6B15D2464E8&iid=CA4FD0336C81A37A&sid=DB817633AA4F79B9&eid=933658645952ED9F&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=1&reference_num=3