%0 Journal Article
%T PHOTOLUMINESCENCE STUDIES OF DEFECTS IN GaAa<br>GaAs中缺陷的光致发光研究
%A Weng Yumin
%A Liu Song
%A Zong Xiangfu
%A <br>翁渝民
%A 刘松
%J 红外与毫米波学报
%D 1992
%I Science Press
%X Deep level defects in undoped semi-insulating GaAs are investigated by photo-luminescence (PL) technique. Several PL emissions related to deep level defects and their behaviors have been observed. The emission band at 0.69eV is due to the well known main mid-gap level EL2 and the 0.77eV PL bands attributable to the transition from the con-duction band to the As_(Ga)donor level. It is suggested that the 1.447eV and 1.32eV PL emis-sions are caused by the double acceptors Ga_(As), with levels 78meV and 203meV above the valence band, respectively.
%K photoluminescence
%K defects
%K semi-insulating GaAs<br>半绝缘
%K 砷化镓
%K 光致发光
%K 缺陷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=730D7BC2D9E2DA38A2AC8EB03FA32E95&yid=F53A2717BDB04D52&vid=708DD6B15D2464E8&iid=CA4FD0336C81A37A&sid=DB817633AA4F79B9&eid=933658645952ED9F&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=1&reference_num=3