%0 Journal Article
%T STUDY OF PHOTOREFLECTANCE SPECTROSCOPY ON GaAs/GaAlAs HETEROJUNCTION<br>GaAs／GaxAl1—xAs异质结的调制反射光谱研究
%A ZHANG LINGJUN
%A SHEN XUECHU
%A <br>沈学础
%A 章灵军
%J 红外与毫米波学报
%D 1993
%I Science Press
%X The GaAs/GaAlAs heterojunctions with different thicknesses of cap layer were investigated by the use of photoreflectance (PR) spectroscopy. By analyzing the Franz-Keldysh Oscillation (FKO) in PR spectrum, it was found that the thickness of cap layer would influence the surface band structure of heterojunction, and the surface field was increased with the decrease of thickness of cap layer. It was also found that the PR lineshape would rotate with the varying of the thickness of cap layer. This is coincident with the theoretical calculation while considering the interference effect between different layers.
%K heterojunction
%K photoreflectance
%K Fermi level
%K photogenerated voltage<br>异质结
%K 调制光谱
%K 能带结构
%K 砷化镓
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=6F51ABDDC19F94B0AA30063FA5BA59D6&yid=D418FDC97F7C2EBA&vid=59906B3B2830C2C5&iid=94C357A881DFC066&sid=8C27CCA578E52082&eid=0918129209B14F3E&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=3