%0 Journal Article
%T STUDY OF THE RELATION BETWEEN INTERFACIAL REACTION AND FORMATION OF SCHOTTKY BARRIERS<br>Pt／Si界面反应与肖特基势垒形成的研究
%A DING SUNAN
%A XU ZHENJIA
%A <br>丁孙安
%A 许振嘉
%J 红外与毫米波学报
%D 1993
%I Science Press
%X Electrical measurements (DLTS and C-V) were combined with surface analysis techniques (AES and SIMS) to study the reactions, atomic structure, the distribution of defect/impurity and the Schottky barrier heights at Pt/Si and Pt-silicides/Si interfaces. The relation between the interracial reaction and the formation of Schottky barriers is discussed in this paper in detail.
%K interfacial reaction
%K Schottky barrier
%K deep level
%K silicide<br>界面反应
%K 肖特基势垒
%K 硅化物
%K 铂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=DFBA480137533F97E44B7DB6729BE84B&yid=D418FDC97F7C2EBA&vid=59906B3B2830C2C5&iid=94C357A881DFC066&sid=44FDB9366EDDFA2B&eid=AFB2C35009D5D191&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=2&reference_num=0