%0 Journal Article
%T SILICON-ASED LOW-DIMENSIONAL STRUCTURE MATERIALS<br>硅基低维结构材料
%A Xia Jianbai
%A <br>夏建白
%J 红外与毫米波学报
%D 1994
%I Science Press
%X The development of the growth technology of Si/Ge superlattices and the discovery of luminesceilce of porous silicon give rise to intense interest of investiration on .the Si-based low-dimensional structuxe materials. This paper reviews recent progress in this field, including:electronic states and optical properties of Si/Ge superlattices, transport properties of modulatinn doped Si/Ge.Si1-x. heterojunctions, and luminescence mechanism of porous silicon, etc.
%K low-dimensional structure
%K modulation doped heterojunction
%K porous silicon
%K Si/Ge superlattices<br>低维结构
%K 多孔硅
%K 异质结
%K 硅
%K 发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=99A9D9DD46EF127C0C5C024366713A17&yid=3EBE383EEA0A6494&vid=FC0714F8D2EB605D&iid=CA4FD0336C81A37A&sid=CA4FD0336C81A37A&eid=5D311CA918CA9A03&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=2