%0 Journal Article
%T TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN GaAS/AlGaAS ASYMMETRIC COUPLED DOUBLE QUANTUM WELLS STRUVTURE<br>GaAs／AlGaAs非对称耦合双阱光荧光的温度依赖关系
%A Xu Shijie
%A Liu Jian
%A Li Guohu
%A Zheng Houzhi
%A Jiang Desheng
%A <br>徐士杰
%A 刘剑
%J 红外与毫米波学报
%D 1994
%I Science Press
%X Photoluminescence spectra at various temperatures of GaAs/AlGaAs asymmetric coupled double quantum wells pin structure are reported. Different temperature dependence of heavy-hole excitonic peaks intensity in narrow-and wide-well was observed.The results show that the thermionic emission of the electrons in the narrow-well results in more rapid decreasing of the luminescence intensity. The special temperature dependence of light-hole excitonic peaks intellsity in the wide-well and its mechanism were studied, too.
%K photoluminescence
%K GaAs/AlGaAs
%K quantum well
%K temperature dependence<br>光荧光
%K 量子阱
%K 温度相关
%K 砷化镓
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=ECE7F30C92737F9DC1752992BA8E4AB7&yid=3EBE383EEA0A6494&vid=FC0714F8D2EB605D&iid=CA4FD0336C81A37A&sid=E44E40A2398D4F2A&eid=E203FB1A272C9DD2&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=2