%0 Journal Article
%T INVESTIGATION ON PHOTOVOLTAIC CHARACTERISTICS OF Ge_xSi_(1-x)/Si STRAINED-LAYER SUPERLATTICES<br>GexSi1—x／Si应变层超晶格光伏特性研究
%A Zhu Wenzhang
%A Liu Shiyi
%A <br>朱文章
%A 刘士毅
%J 红外与毫米波学报
%D 1992
%I Science Press
%X 采用电容耦合法测量了Ge_xSi_(1-x)/Si应变层超晶格在不同温度下的光伏特性.在Ⅱ型能带排列的样品中观测到价带-导带子带和价带子带-导带光跃迁的4个峰.对所有样品测得的光伏截止波长都比理论预期值小.还对光电压随温度的变化作了初步解释.
%K photovoltaic effect
%K strained-layer superlattices
%K interband optical transitions<br>光伏效应
%K 半导体
%K 应变层超晶格
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=0F2BD501008688691144D5F19DDD54AA&yid=F53A2717BDB04D52&vid=708DD6B15D2464E8&iid=0B39A22176CE99FB&sid=03A030BB0C519C60&eid=09E495F616948E78&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=2&reference_num=2