%0 Journal Article
%T STUDIES OF MAGNETO CAPACITANCE SPECTROSCOPY OF InSb MIS STRUCTURE<br>InSbMIS结构的磁电容谱研究
%A Wu Liangjin
%A Liu Kun
%A Chu Junhao
%A <br>吴良津
%A 刘坤
%J 红外与毫米波学报
%D 1997
%I Science Press
%X By measuring the magneto capacitance spectroscopy of an n type InSb metal insulator semiconductor (MIS) structure, the 2 dimensional hole subband in the p type channel of the InSb MIS device was investigated under different magnetic fields at 1 2K.It was shown that the on set energy of the p type channel has a strong dependence on the magnetic field. This behavior has been attributed mainly to the dependence of the InSb band gap energy on magnetic field.
%K MOS device
%K 2
%K dimensional hole system
%K magnetocapacitance<br>二维空穴气
%K 磁电容谱
%K MIS器件
%K 红外器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=76DDD033259936E5057B4C1DAD237A06&yid=5370399DC954B911&vid=7801E6FC5AE9020C&iid=CA4FD0336C81A37A&sid=DF92D298D3FF1E6E&eid=F3090AE9B60B7ED1&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=6