%0 Journal Article
%T STUDIES OF DEEP DEFECT LEVELS IN Hg_(1-x)Cd_xTe<br>Hg1—xCdxTe深缺陷能级研究
%A Zhou Jie Feng Songlin Lu Liwu
%A <br>周洁
%A 司承才
%J 红外与毫米波学报
%D 1994
%I Science Press
%X The defect levels in Hg1-xCdxTe p+n junction photodiodes were studied by using Deep Levels Transient Spectroscopy (DLTS). Two electron traps, E(0.06), and E (0.15) and two hole traps, H (0.075) and H (0.29), were obtained, respectively. Their concentrations are only a few percent of shallow levels. According to these characteristic parameters, the minority lifetime of the devices and the product of area times the dynamic resistance at zero bias are estimated. The nature of some defect levels is suggested, too.
%K deep levels transient spectroscopy
%K defect levels
%K Hg1_xCdx
%K Te<br>深能级瞬态谱
%K 缺陷能级
%K HgCdTe
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=2B1DB2532F57424A0AD410B5DE1A1EF9&yid=3EBE383EEA0A6494&vid=FC0714F8D2EB605D&iid=94C357A881DFC066&sid=3356A7630A93A219&eid=8C27CCA578E52082&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0