%0 Journal Article
%T Title Influence of Deposited Temperature on Packing Density of SiO Thin Films<br>沉积温度对一氧化硅薄膜聚集密度的影响
%A LUO Hai-han
%A LIU Ding-quan
%A YIN Xin
%A CAI Yuan
%A ZHANG Li
%A <br>罗海瀚
%A 刘定权
%A 尹欣
%A 蔡渊
%A 张莉
%J 光子学报
%D 2012
%I 
%X Silicon monoxide (SiO) thin films is one of the most commonly used optical film in short-wave and medium-wave infrared. High packing density for enhancing the spectra stability and the quality of the optical thin film elements is extremely important. Used 99.99% purity of the SiO bulk materials, SiO thin films were prepared by molybdenum boat thermal evaporation in 5×10－4 Pa vacuum pressure at different deposited temperature, while deposition rate was monitored and demonstrated at 1.2~1.5 nm/s by quartz crystal oscillation controller. The thickness of the thin films on silicon substrate is about 2.2~2.4 μm. Used the Fourier transform infrared spectrometer to test the spectral characteristics of SiO thin films before and after the thin film suck tide, and according to the wavelength deviation dispersion theory, calculated the packing density. The results show that as the deposition temperature increased, the packing density increased, from 0.91 at room temperature to 0.99 at 250 ℃.
%K Optical thin film
%K Packing density
%K Silicon monoxide
%K Deposited temperature<br>光学薄膜
%K 聚集密度
%K 一氧化硅
%K 沉积温度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=1D36885FD7A8294B59AFA8488BDC32D6&yid=99E9153A83D4CB11&vid=2001E0D53B7B80EC&iid=0B39A22176CE99FB&sid=C5F8B8CB20F1B3D8&eid=9D453329DCCABB94&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=9