%0 Journal Article
%T Influence of Multi-crystalline Silicon Surfaces Passivation on Pit Topography of Textured Surface<br>表面钝化对多晶硅绒面形貌的影响
%A WANG Kun-xia
%A FENG Shi-meng
%A XU Hua-tian
%A SHAN Yi-hong
%A TIAN Jia-tong
%A HUANG Jian-hua
%A YANG Shu-quan
%A HUANG Lu
%A ZHOU Li-rong
%A <br>王坤霞
%A 冯仕猛
%A 徐华天
%A 单以洪
%A 田嘉彤
%A 黄建华
%A 杨树泉
%A 黄璐
%A 周利荣
%J 光子学报
%D 2012
%I 
%X The surface texturing of multi-crystalline silicon is a technology that needs to be broken through. For the improvement of pit-trap shape on mc-Si surface, a new method is presented that the passiviation of Si surface is done to reduce the acid reaction velocity. A series of experiments are carried out in which mc-Si is textured in the acid solution containing different content of additives under the same technology parameters. Samples' structure is observed using scanning electron microscope, and the reflectance spectrum is measured by spectrophotometer. The SEM of experimental sample's surface illustrates that the textured surface is full of a lot of pit trap with the good light trapping effect. Moreover, the deep ditch like valley, which increases the leakage current of mc-Si solar cells and reduces the conversion efficiency, is not found in the surface. This method is valuable for the improvement of solar cell efficiency.
%K Multi-crystalline silicon
%K Surface etching
%K Topography
%K Reflectance<br>多晶硅
%K 绒面技术
%K 陷光效应
%K 反射率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=1D36885FD7A8294BDFAFCA171AC5A5F0&yid=99E9153A83D4CB11&vid=2001E0D53B7B80EC&iid=0B39A22176CE99FB&sid=FBCA02DBD05BD4EA&eid=1DF3F9D75A12D97B&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=13