%0 Journal Article
%T Preparation of Silicon-based Nanoscale β-SiC Quantum Dot Array<br>硅基纳米b-SiC量子点列阵的制备
%A WU Xing-long
%A GU Yi
%A BAO Xi-mao
%A <br>吴兴龙，顾沂，鲍希茂
%J 过程工程学报
%D 2002
%I 
%X Preparation of nanoscale b-SiC quantum dot array having application potential in Si-based optoelectronic integration by two-step self-organization is reported. Firstly, C60 molecules were covalently coupled on the modified Si wafer through one of two kinds of 2D distributed coupling agents. One of the coupling agents could break CC double bonds in C60 and make C60 molecules coupled uniformly on the surface of Si wafer. Secondly, to form the SiC quantum dots, two approaches were taken. Either a layer of Si film is coated on the C60-coupled sample or another Si wafer is covered on the coupled sample to form a sandwiched structure. Subsequent annealing at 900oC in N2 for 20 min makes C60 decomposed to produce active C ions. Since Si atoms exist around these C ions, they react to form SiC. Self-organization of SiC molecules forms a 2D SiC quantum dot array. The order of C60 arrangement determines the ordering of SiC array.
%K Si-based SiC quantum dots
%K self-organized growth<br>硅基碳化硅量子点
%K 自组织生长
%K 纳米半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=3FCF8B1A330466D5&jid=B9EE12934D19905403D996AE65CEEEED&aid=526F068828F8E046&yid=C3ACC247184A22C1&vid=0B39A22176CE99FB&iid=E158A972A605785F&sid=DFEE4E8C33C95CEF&eid=8ED630AD8C61FAE8&journal_id=1009-606X&journal_name=过程工程学报&referenced_num=0&reference_num=8