%0 Journal Article
%T Study of Thermal Characteristics of 808 nm InGaAsP-InP SQW Lasers<br>808 nm InGaAsP-InP单量子阱激光器热特性研究
%A Zhang Yongming
%A Zhong Jingchang
%A Lu Guoguang
%A Qin Li
%A Zhao Yingjie
%A Hao Yongqin
%A Jiang Xiaoguang
%A <br>张永明
%A 钟景昌
%A 路国光
%A 秦莉
%A 赵英杰
%A 郝永芹
%A 姜晓光
%J 光子学报
%D 2006
%I 
%X The temperature characteristics of 808 nm InGaAsP-InP SQW lasers have been investigated in a heat-tight system by analyzing their structure. It is shown that the power and the slope efficiency of the devices decreases from 1.74 m to 0.51 W and 1.08 mW/mA to 0.51 mW/mA in the temperature range of 23～70℃,respectively. Lasing wavelength shift coefficient dλ/dT is 0.44 nm/(℃). The characteristic temperature T0 of 325 K is experimentally obtained. The thermal resistance of the chip,determined experimentally,is 3.33℃/W.
%K SQW Laser
%K 808 nm
%K InGaAsP-InP
%K Thermal characteristics
%K Characteristic temperature<br>单量子阱激光器
%K 808nm
%K InGaAsP-InP
%K 热特性
%K 特征温度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=CD369D29A965C7F0&yid=37904DC365DD7266&vid=6209D9E8050195F5&iid=CA4FD0336C81A37A&sid=9CF7A0430CBB2DFD&eid=59906B3B2830C2C5&journal_id=1004-4213&journal_name=光子学报&referenced_num=2&reference_num=9