%0 Journal Article
%T The Study of InAsxSb1-x on GaSb Substrate Grown by LP-MOCVD<br>GaSb衬底上外延InAsxSb1-x材料的LP-MOCVD研究
%A Li XiaoTing
%A Wang YiDing
%A Wang Tao
%A Yan JingZhi
%A Wang JingWei
%A Sai XiaoFeng
%A Gao HongJie
%A Zhang ZhiYong
%A <br>李晓婷
%A 王一丁
%A 汪 韬
%A 殷景致
%A 王警卫
%A 赛小锋
%A 高鸿楷
%A 张志勇
%J 光子学报
%D 2005
%I 
%X InAsSb epitaxy had been obtained on(100) GaSb substrate by a home-made low pressure MOCVD system.The characteristic of InAsSb epitaxy was investigated by means of x-ray diffraction technique,optical microscopy and scanning electron microscopy(SEM),and electron microprobe analysis(SEM).And the dependence of surface morphology and solid composition of epitaxy on growth temperature,Ⅴ/Ⅲ ratio and buffer layer is studied.High quality mirror-like surfaces with a minimum lattice mismatch was obtained.
%K LP-MOCVD
%K GaSb
%K InAsSb
%K Growth temperature<br>LP-MOCVD
%K GaSb
%K InAsSb
%K 生长温度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=8347450216A1876A&yid=2DD7160C83D0ACED&vid=339D79302DF62549&iid=9CF7A0430CBB2DFD&sid=196264D95F295743&eid=29BFCA84676506CC&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=14