%0 Journal Article
%T Design and Fabrication of Anti-reflection Coating for 1.55 μm Polarization-insensitive Semiconductor Optical Amplifiers<br>1.55 μm偏振无关半导体光放大器腔面减反膜的研制
%A Ma Hong
%A Zhu Guangxi
%A Chen Sihai
%A Yi Xinjian
%A <br>马宏
%A 朱光喜
%A 陈四海
%A 易新建
%J 光子学报
%D 2005
%I 
%X TiO_2/SiO_2 multiple layers anti-refledtion (AR) coatings for the facets of 1.55 μm polarization insensitive semiconductor optical amplifiers were designed and fabricated. Less than 5×10 -4 reflectivities were obtained for both two layers and four layers AR coatings. An In-Situ monitoring for reflectivity was designed and employed during the coating process. The amplifier was fabricated forming ridge waveguide structure with 7° tilted cavity, which showed a less than 0.4 dB ASE ripple, a more than 52 nm bandwidth, excellent polarization insensitivity (less than 0.5 dB) over the entire range of wavelength (1.52~1.58 μm) and a gain of 27 dB at bias current of 200 mA and 1550 nm wavelength.
%K Semiconductor technology
%K Anti-reflection (AR) coating
%K Polarization-insensitive
%K Semiconductor optical amplifier<br>半导体技术
%K 减反膜
%K 偏振无关
%K 半导体光放大器
%K 反射率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=474A4CC3DA7AD907&yid=2DD7160C83D0ACED&vid=339D79302DF62549&iid=94C357A881DFC066&sid=3D8AB54CA690066A&eid=8D71AF42ACD39979&journal_id=1004-4213&journal_name=光子学报&referenced_num=3&reference_num=6