%0 Journal Article
%T An In-situ Method for Measuring the Wafer Flatness<br>光刻机硅片表面不平度原位检测技术
%A Information Optics Laboratory
%A Shanghai Institute of Optics
%A Fine Mechanics
%A Chinese Academy of Sciences
%A Shanghai Graduate School of the Chinese Academy of Sciences
%A Beijing
%A <br>张冬青
%A 王向朝
%A 施伟杰
%J 光子学报
%D 2006
%I 
%X As the critical dimensions in the semiconductor industry were shrinking,the influences of wafer flatness on lithographic performance became increasingly greater.Based on the imaging performance of the special marks,the relationships between alignment offsets and wafer height offsets were discussed.Then,a novel method for measuring the wafer flatness was presented.Experiments show that wafer flatness and the surface topography can be measured in situ by the technique with high accuracy.Taking into account of the nonuniformity of the adsorption power of vacuum chuck,wafer flatness can be measured with high accuracy.Compared to the level sensor based method,the spatial resolution is increased by 67%.The surface topography of the wafer can be obtained by the new method.
%K Wafer flatness
%K FOCAL technique
%K Optical microlithography
%K In-situ measurement<br>硅片表面不平度
%K FOCAL技术
%K 光刻机
%K 原位检测
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=40E39AC3A6E8580D&yid=37904DC365DD7266&vid=6209D9E8050195F5&iid=59906B3B2830C2C5&sid=AB65A134F4ED2A2E&eid=8C8371356FB4C85C&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=16