%0 Journal Article
%T The Fabrication of Low Cost Si-based Continuously Tunable 1.55μm RCE Photodetector<br>硅基1.55 μm可调谐共振腔窄带光电探测器的研究
%A State Key Joint Laboratory of Integrated Optoelectronics
%A <br>毛容伟
%A 成步文
%A 李传波
%A 左玉华
%A 滕学公
%A 罗丽萍
%A 余金中
%A 王启明
%J 光子学报
%D 2005
%I 
%X A novel method for fabricating low cost Si-based continuously tunable long wavelength resonant cavity enhanced (RCE) photodetectors was reported,in which InGaAs epitaxy layers were bonded to silicon substrates without any special treatment on bonding surfaces,employing the silicate gel as bonding medium.A thermally tunable Si-based InGaAs RCE photodetector operating at 1.3~1.6 μm was obtained,with a quantum efficiency of about 44% at the resonant wavelength of about 1.5 μm and a FWHM of about 12.5 nm.A tuning range of 14.5 nm and a 3 dB bandwidth of 1.8 GHz were obtained. This device was fabricated with traditional processes,thus the cost was decreased. It demonstrates a great potential for industry processes.
%K Resonant cavity enhanced photodetector
%K RCE
%K Medium bonding
%K InGaAs
%K Tunable
%K High frequency response<br>共振腔增强型探测器
%K 介质键合
%K InGaAs
%K 可调谐
%K 高频响应
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=2DAC345C4950791F&yid=2DD7160C83D0ACED&vid=339D79302DF62549&iid=59906B3B2830C2C5&sid=5B3A9A8E2DA941E3&eid=65A936AA46C30FB3&journal_id=1004-4213&journal_name=光子学报&referenced_num=4&reference_num=18