%0 Journal Article
%T Infrared Transmission Spectroscopy of B+ implanted HgCdTe Epilayers<br>B+注入HgCdTe外延材料的红外透射光谱分析
%A (Research Center for Advanced Materials
%A Devices
%A Shanghai Institute of Technical Physics
%A Chinese Academy of Sciences
%A Shanghai
%A <br>王庆学
%A 魏彦锋
%A 朱建妹
%A 杨建荣
%A 何力
%J 光子学报
%D 2005
%I 
%X The calculation method of infrared transmission spectroscopy of boron-implanted HgCdTe epilayers was proposed based on multilayer model, transfer matrix and nonlinear least squares method. The results show that the transmission spectra of HgCdTe epilayers can be fitted very well by the theoretical calculation curves. By fitting, the carrier concentration, the mobility, the sheet carrier concentration, the refractive index and the extinction coefficient in B+ implanted zone are obtained. These parameters are consistent with those obtained from different Hall measurement before. The effect of B+ implantation on the transmission spectra of HgCdTe epilayers mainly comes from the changes of the refractive index and the extinction coefficient of HgCeTe material in B+ implanted zone.
%K Implantation
%K HgCdTe epilayers
%K Infrared spectroscopy
%K Carrier concentration<br>离子注入
%K 碲镉汞外延材料
%K 红外光谱
%K 载流子浓度分布
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=2CFD209E97175F08&yid=2DD7160C83D0ACED&vid=339D79302DF62549&iid=5D311CA918CA9A03&sid=4206C58D935377EA&eid=7CCBDF94263DBB99&journal_id=1004-4213&journal_name=光子学报&referenced_num=5&reference_num=8