%0 Journal Article
%T Multilayers on Extreme Ultraviolet Lithography Masks and Illumination Error<br>极紫外投影光刻掩模的多层膜与照明误差
%A Yang Xiong
%A Jin Chunshui
%A Zhang Lichao
%A <br>杨雄
%A 金春水
%A 张立超
%J 光子学报
%D 2006
%I 
%X The peak reflectivity, bandwidth and centroid wavelength of Extreme Ultraviolet Lithography (EUVL) Mask as a function of roughness, period thickness and thickness ratio of Mo/Si multilayers were calculated.Nine equations were obtained by fitting the calculated data. Then, the reflective spectrum of 6-mirror EUVL system were simulated, and calculation were performed to work out the relative illumination intensity at wafer plane. Finally, illumination uniformity error at wafer plane induced by the mask were analyzed, and resulted a formula for estimating the error.
%K Film optics
%K Extreme ultraviolet lithography
%K Mask
%K Illumination error<br>薄膜光学
%K 极紫外投影光刻
%K 掩模
%K 照明误差
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=615116071D02F6B8&yid=37904DC365DD7266&vid=6209D9E8050195F5&iid=94C357A881DFC066&sid=06DAE5E1DF7D0B6A&eid=2B6C525BCE31A7DA&journal_id=1004-4213&journal_name=光子学报&referenced_num=3&reference_num=9