%0 Journal Article
%T Influence of Ridge Width on Its Frequency Bandwidth of Traveling-wave Electroabsorption Modulators
行波电吸收调制器中脊宽对频带宽度的影响
%A The State Key Lab of Optoelectronic Materials
%A Technol
%A Zhongshan University
%A Guangzhou
%A
邢晓波
%A 刘叶新
%A 陈晓文
%A 傅思镜
%A 林位株
%J 光子学报
%D 2005
%I
%X According to the microwave properties of the traveling-wave electroabsorption modulator (TW-EAM) transmission line, an equivalent circuit model was presented and a GaAs/GaAlAs TW-EAM for 850 nm has been fabricated. The influence of the ridge width on the frequency bandwidth was driven by analyzing the characteristic impedance Z_0, microwave transmission constant γ and S_ 21. A reduced velocity mismatch between optical wave and microwave and an impedance mismatch were demonstrated for the narrower ridge width. Potential frequency bandwidth of 23.9 GHz of a TW-EAM was predicted by theoretical simulation when the ridge width was 2 μm.
%K Traveling-wave electroabsorption modulator (TW-EAM)
%K Characteristic impedance
%K Transmission constant
%K Modulation bandwidth
行波电吸收调制器(TW—EAM)
%K 特性阻抗
%K 传输常数
%K 调制带宽
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=7F5721E21E801F84&yid=2DD7160C83D0ACED&vid=339D79302DF62549&iid=59906B3B2830C2C5&sid=82D2CD7E370B154A&eid=14CA636F97F0824D&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=13