%0 Journal Article %T Influence of Ridge Width on Its Frequency Bandwidth of Traveling-wave Electroabsorption Modulators
行波电吸收调制器中脊宽对频带宽度的影响 %A The State Key Lab of Optoelectronic Materials %A Technol %A Zhongshan University %A Guangzhou %A
邢晓波 %A 刘叶新 %A 陈晓文 %A 傅思镜 %A 林位株 %J 光子学报 %D 2005 %I %X According to the microwave properties of the traveling-wave electroabsorption modulator (TW-EAM) transmission line, an equivalent circuit model was presented and a GaAs/GaAlAs TW-EAM for 850 nm has been fabricated. The influence of the ridge width on the frequency bandwidth was driven by analyzing the characteristic impedance Z_0, microwave transmission constant γ and S_ 21. A reduced velocity mismatch between optical wave and microwave and an impedance mismatch were demonstrated for the narrower ridge width. Potential frequency bandwidth of 23.9 GHz of a TW-EAM was predicted by theoretical simulation when the ridge width was 2 μm. %K Traveling-wave electroabsorption modulator (TW-EAM) %K Characteristic impedance %K Transmission constant %K Modulation bandwidth
行波电吸收调制器(TW—EAM) %K 特性阻抗 %K 传输常数 %K 调制带宽 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=7F5721E21E801F84&yid=2DD7160C83D0ACED&vid=339D79302DF62549&iid=59906B3B2830C2C5&sid=82D2CD7E370B154A&eid=14CA636F97F0824D&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=13