%0 Journal Article
%T Investigation of Mechanisms on 1/f Noise and G-R Noise in Optoelectronic Coupled Devices<br>光电耦合器件1/f噪声和g-r噪声的机理研究
%A 包军林
%A 庄奕琪
%A 杜磊
%A 马仲发
%A 李伟华
%A 李聪
%J 光子学报
%D 2005
%I 
%X Experimental dependences on bias current and physical mechanisms of 1/f noise and g-r noise (generation-recombination noise) in Optoelectronic Coupled Devices (OCDs) are studied. Experimental results demonstrate that g-r noise of OCDs emerges with 1/f noise in the range of low frequencies and both of them have a similar rule, that is to say, in the beginning, magnitudes of g-r noise and 1/f noise increase and then decrease with the bias current keep increasing. From measuring noise of the front part and back part in OCDs, it is found that g-r noise source in OCDs lies in the photosensitive transistor. Based on mechanisms of carrier fluctuation, it is discussed that 1/f noise in OCDs belongs to surface 1/f noise and g-r noise is due to trapping and detrapping processes between carriers and deep-level in the emitter space-charge region of photosensitive transistor.
%K 1/f noise
%K g-r noise
%K OCD
%K Deep-level<br>1／f噪声
%K g-r噪声
%K 光电耦合器件
%K 深能级
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=FDDA93B45B00AAE4&yid=2DD7160C83D0ACED&vid=339D79302DF62549&iid=B31275AF3241DB2D&sid=E002FF26604EFFAB&eid=E9F71A2A3584AD5D&journal_id=1004-4213&journal_name=光子学报&referenced_num=3&reference_num=11