%0 Journal Article
%T 14xxnm Quantum Well Lasers with Tapered Gain Region<br>带有锥形增益区14xxnm 量子阱激光器的研制
%A (National Engineering Research Center for Optoelectronics Devices
%A Institute of Semiconductors
%A The Chinese Academy of Sciences
%A Beijing
%A <br>张洪波
%A 韦欣
%A 朱晓鹏
%A 王国宏
%A 张敬明
%A 马骁宇
%J 光子学报
%D 2005
%I 
%X 利用MOCVD生长了14xxnmAlGaInAs/AlInAs/InP应变量子阱外延片 采用带有锥形增益区脊型波导结构和普通条形脊型波导结构在相同的实验条件下制作800μm腔长激光器管芯,在相同的驱动电流下前者可以获得更高的输出光功率,而且P Ⅰ曲线线性度较好、饱和电流高1200μm腔长带有锥形增益区脊型波导结构管芯功率达到500mW,饱和电流3A以上,峰值波长1460nm,远场发散角为39°×11°
%K 14xxnm pump laser
%K Tapered gain region
%K Strained quantum well lasers<br>14xxnm抽运源
%K 锥形增益区
%K 量子阱激光器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=A9B2AB98AC09BBD0&yid=2DD7160C83D0ACED&vid=339D79302DF62549&iid=E158A972A605785F&sid=C4490A71BEB872FA&eid=E3C3E274D87A8C16&journal_id=1004-4213&journal_name=光子学报&referenced_num=0&reference_num=8