%0 Journal Article
%T Photoelectric Characteristics of SiC1-xGex/SiC Heterojunction Diode<br>SiC1-xGex/SiC 异质结光电二极管特性的研究
%A Abstract
%A <br>靳瑞英
%A 陈治明
%A 蒲红斌
%A 隋晓红
%J 光子学报
%D 2005
%I 
%X Abstract　Photoelectric characteristics of SiC1-xGex/SiC heterojunction diode were simulated using MEDICI tools, and the simulation results are presented and discussed in this letter. The abrupt heterojunction diode is composed of a 1 μm thick heavily doped n-type SiC layer and a 0.4 μm thick lightly doped p-type SiC1-xGex layer with varied composition ratios. It has been shown that photocurrent of the p- n+ SiC1-xGex/SiC diode is not decreased apparently by change the composition ratio from 0.2 to 0.3 for the applied reverse-bias voltage of 3 V and the incident light intensity of 0. 23 W/cm2.Corresponding photocurrents of the diodes are 7. 765 × 10 -7 A/μm and 7. 438 × 10-7 A/ μm, and the longest wavelength limits are 0.64 μm and 0.70 μm, respectively. It has also been shown by the simulation results that p-i-n structure composed by adding a p + -SiC1-xGex thin layer on top of the lightly doped p-type SiC1-xGex layer is much better for obtaining a higher photocurrent. Under the same conditions, photocurrents of 1. 6734 10-6 A/μm and 1. 844 × 10-6 A/μm can be obtained in the p-i-n SiC1-xGex/SiC diodes with x = 0.2 and 0.3, respectively.
%K SiC_(1-x)
%K Ge_x/SiC
%K Heterojunction
%K Absorption coefficient<br>SiC1-xGex
%K 异质结
%K 吸收系数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=4B71D00A2C9881AC&yid=2DD7160C83D0ACED&vid=339D79302DF62549&iid=0B39A22176CE99FB&sid=EF27C460877D3C9F&eid=3D9746C06EC12B45&journal_id=1004-4213&journal_name=光子学报&referenced_num=4&reference_num=6