%0 Journal Article
%T The Effect of P-doping Density and Al Composition Upon Luminescent Efficiency
掺杂与Al组分对AlGaInP四元系LED发光效率的影响
%A (Institute of Photoelectronic Material
%A Technology
%A South China Normal University
%A Guangzhou
%A
陈贵楚
%A 范广涵
%A 陈练辉
%A 刘鲁
%J 光子学报
%D 2004
%I
%X The relation of Al composition and luminence effici ency is gotten under various P-doping density by analyzing carrier transportion in double heterojunction of LED,and the law of doping density and Al composition vs luminence efficiency can be derived.So this conclusion would have a guide to device design and MOCVD epitaxy.
%K AlGaInP
%K Al composition
%K P-doping
%K Luminence efficien cy
A1GalnP
%K A1组分
%K 掺杂
%K 发光效率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=9BEFD9C02D6BEAD4&yid=D0E58B75BFD8E51C&vid=27746BCEEE58E9DC&iid=38B194292C032A66&sid=85002451B65CE0D1&eid=C2F76551C0111538&journal_id=1004-4213&journal_name=光子学报&referenced_num=3&reference_num=7