%0 Journal Article %T The Effect of P-doping Density and Al Composition Upon Luminescent Efficiency
掺杂与Al组分对AlGaInP四元系LED发光效率的影响 %A (Institute of Photoelectronic Material %A Technology %A South China Normal University %A Guangzhou %A
陈贵楚 %A 范广涵 %A 陈练辉 %A 刘鲁 %J 光子学报 %D 2004 %I %X The relation of Al composition and luminence effici ency is gotten under various P-doping density by analyzing carrier transportion in double heterojunction of LED,and the law of doping density and Al composition vs luminence efficiency can be derived.So this conclusion would have a guide to device design and MOCVD epitaxy. %K AlGaInP %K Al composition %K P-doping %K Luminence efficien cy
A1GalnP %K A1组分 %K 掺杂 %K 发光效率 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=9BEFD9C02D6BEAD4&yid=D0E58B75BFD8E51C&vid=27746BCEEE58E9DC&iid=38B194292C032A66&sid=85002451B65CE0D1&eid=C2F76551C0111538&journal_id=1004-4213&journal_name=光子学报&referenced_num=3&reference_num=7