%0 Journal Article
%T INFLUENCE OF ION IMPLANTATION ON THE EFFICIENT VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON<br>离子注入对多孔硅可见光发射特性的影响
%A Zhou Yongdong
%A <br>周咏东
%A 金亿鑫
%J 光子学报
%D 1996
%I 
%X in this paper the influence of ion implantation on the efficient visible photoluminescence(PL) of porous silicon is reported based on the previous study on mechanism of the PL. Theexperiments prove that the ion implantation not only weakens the intensity of the visiblephotoluminescence from porous silicon, but changes the PL property of it. After ion implantation,the PL spectra occur a blue shift, and the full width at half maximum (FWHM) stretches. There is asubpeak in the short wavelength direction of the PL spectrum and there is also a weakened PLposition(hole burn) in the spectrum. The above phenomena are also explained.
%K Porous silicon
%K Photoluminescence
%K Ion implantation<br>多孔硅
%K 光致发光
%K 离子注入
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=9F6139E34DAA109F9C104697BF49FC39&aid=F5BCE0C6493214F024F3CADAF44F3AB4&yid=8A15F8B0AA0E5323&vid=C5154311167311FE&iid=CA4FD0336C81A37A&sid=A04140E723CB732E&eid=B91E8C6D6FE990DB&journal_id=1004-4213&journal_name=光子学报&referenced_num=1&reference_num=3