%0 Journal Article
%T FDTD Modeling of Active Devices Characterized by Measured S-Parameters<br>基于测量S参数的有源器件FDTD建模方法
%A Chen Zhi-hui
%A Chu Qing-xin
%A <br>陈智慧
%A 褚庆昕
%J 电子与信息学报
%D 2008
%I 
%X A novel FDTD modeling approach for active devices characterized by measured S-parameters is presented. This approach applies Vector Fitting (VF) technique and Piecewise Linear Recursive Convolution (PLRC) technique to complete modeling process, and does not need to know the equivalent circuits of active devices. It preserves the explicit nature of the conventional FDTD method, and obtains a general updated formula. Furthermore, the main data-processing procedure is directly handled over the frequency band of interest, which avoids the time-domain non-causal error in traditional techniques. It is useful to full-wave analyze hybrid microwave circuits including practical active devices.
%K FDTD<br>S参数
%K 矢量拟合技术
%K 分段递推卷积技术
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=0C25ADCB79D87C50578C3EAC34F07518&yid=67289AFF6305E306&vid=340AC2BF8E7AB4FD&iid=708DD6B15D2464E8&sid=3B3021FC0870F8D2&eid=94C88B5D697EEAE6&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=8