%0 Journal Article
%T Heating process of solid-liquid-solid (SLS) growth of silicon nanowires<br>硅纳米线的固-液-固热生长及升温特性研究
%A Xing Yingjie
%A Xi Zhonghe
%A Yu Dapeng
%A Hang Qingling
%A Yan Hanfei
%A Feng Sunqi
%A Xue Zengquan
%A <br>邢英杰
%A 奚中和
%A 俞大鹏
%A 杭青岭
%A 严涵斐
%A 冯孙齐
%A 薛增泉
%J 电子与信息学报
%D 2003
%I 
%X Large-scale amorphous Si nanowires are prepared by heating the Si substrate at 950-1000°C under the ambient of Ar/H2 (2.5×104Pa) using Ni (or Au) catalyst. The nanowires have a length up to several tens micron and a diameter of 10-40 nm. A solid-liquid-solid (SLS) mechanism is found controlling the nanowire growth. The heating process during SLS growth is studied detailedly using SEM and TEM. Effects of several processing variables such as the pressure, temperature and heating time are investigated individually. The effect of three heating steps is also discussed.
%K Si nanowires
%K SLS mechanism
%K Heating process<br>硅纳米线
%K SLS生长机制
%K 升温特性
%K 一维纳米材料
%K 制备方法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=42508C4A8F853B0F&yid=D43C4A19B2EE3C0A&vid=C5154311167311FE&iid=0B39A22176CE99FB&sid=0F7768518993EDDE&eid=30897FA31CA3354D&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=4&reference_num=8