%0 Journal Article
%T The Study of Multifractal Characterization of IC Defect Outline<br>IC缺陷轮廓多分形特征研究
%A Sun Xiao-li
%A Hao Yue
%A Song Guo-Xiang
%A <br>孙晓丽
%A 郝跃
%A 宋国乡
%J 电子与信息学报
%D 2007
%I 
%X The shapes of real defect outline usually play an extremely important role in the yield prediction and inductive fault analysis of Integrated Circuits(IC).In this paper,the multifractal characterizations of real defect outlines are discussed,and the multifractal spectrum of one typical real defect outline is estimated by the method of Wavelet Transform Modulus Maximum(WTMM),the results obtained in this paper will be useful for a fine characterization and computer simulation of the defects on wafer.
%K IC defect outline
%K Wavelet Transform Modulus Maximum(WTMM)
%K Multifractal spectrum
%K Scaleindex<br>IC缺陷轮廓
%K 小波变换模极大
%K 多分形谱
%K 尺度指数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=958139E333704453&yid=A732AF04DDA03BB3&vid=771469D9D58C34FF&iid=0B39A22176CE99FB&sid=C4490A71BEB872FA&eid=E3C3E274D87A8C16&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=10