%0 Journal Article
%T A STATISTICAL MODEL OF MICROWAVE FET S-PARAMETER USING FACTOR ANALYSIS<br>用因子分析法建立徽波场效应管S参数的统计模型
%A Huang Yi
%A Shen Chuyu
%A <br>黄艺
%A 沈楚玉
%J 电子与信息学报
%D 1997
%I 
%X Factor analysis method is firstly used to establish 5 parameter statistical model of microwave FETs. This statistical model is compared with the one established by principal component analysis method. The results show that the statistical model by factor analysis is more accurate than that by principal component analysis.
%K Statistical model
%K FET
%K Factor analysis
%K S parameter<br>统计模型
%K 因子分析
%K 场效应管
%K S参数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=3B935AC3700EDB63B6A6566BA699851C&yid=5370399DC954B911&vid=2A8D03AD8076A2E3&iid=CA4FD0336C81A37A&sid=E44E40A2398D4F2A&eid=0D0D661F0B316AD5&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=4