%0 Journal Article
%T STUDY OF MORPHOLOGICAL DISTRIBUTION OF DEFECTS IN GaAs WAFERS BY INFRARED DIGITAL IMAGE PROCESSING
红外数字图象处理技术用于研究砷化镓材料中的缺陷形态分布
%A Zhang Fugui
%A
张福贵
%J 电子与信息学报
%D 1988
%I
%X A new method is applied to characterize the defects in GaAs material (e.g. the absorption of EL2 centres). The method consists of transmitting a laser beam (A=l.1-1.5 urn) through the GaAs wafer of 4-8 mm thickness and 50 mm diameter. The image is received by the TOSHIBA 8844 camera and entered into the DATASUD computer image processing system. This image is displayed on a monitor permitting to observe the inhomogeneity (like cross, cells and volutes) of the EL2 and dislocation defects. This paper will introduce a specific image processing software for GaAs material, called ZH1MAG (ZHang IMAGe) and its applications in GaAs wafer. The software can be also applied to any other types of image processing.
%K Infrared image
%K GaAs
%K Image processing software
红外图象
%K 砷化镓
%K 图象处理软件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=CAF86D57FFB223F7&yid=0702FE8EC3581E51&vid=F3090AE9B60B7ED1&iid=B31275AF3241DB2D&sid=8DBE05486163BAB2&eid=41A78CBB5BAB6860&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=8