%0 Journal Article
%T TRANSIENT CHARACTERISTIC ANALYSIS OF HIGH TEMPERATURE CMOS DIGITAL INTEGRATED CIRCUITS<br>高温CMOS数字集成电路的瞬态特性分析
%A Ke Daoming
%A Feng Yaolan
%A Tong Qinyi
%A Ke Xiaoli
%A <br>柯导明
%A 柯晓黎
%A 冯耀兰
%A 童勤义
%J 电子与信息学报
%D 1994
%I 
%X This paper analyzes transient characteristics of high temperature CMOS inverter and gate circuits, and gives computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of high temperature CMOS inverter and gate circuits deteriorate due to reduction of carrier mobility and threshold voltages of MOST's and increase of leakage currents of MOST's orain terminal pn junction. The calculation results can explain experimental phenomena.
%K CMOS digital integrated circuits
%K Transient charactistics
%K High tempera- ture CMOS<br>CMOS数字集成电路
%K 瞬态特性
%K 高温CMOS
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=8D3A282470C48B57B96D6A58F0A90AAE&yid=3EBE383EEA0A6494&vid=7801E6FC5AE9020C&iid=CA4FD0336C81A37A&sid=5D311CA918CA9A03&eid=BCA2697F357F2001&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=6