%0 Journal Article
%T THE STUDY ON SILICON AND GLASS ELECTROSTATIC BONDING MECHANISM<br>硅与玻璃静电封接机理的研究
%A Feng Jingxing
%A <br>冯景星
%J 电子与信息学报
%D 1995
%I 
%X 本文利用板壳理论,分析在硅与玻璃静电封接时,硅与玻璃界面间的静电力与硅片弯曲应力的关系;推导出封接成功的条件,即界面间距d与电压V,刚度D,挠度ω等的关系,并进行了实验验证。
%K Electrostatic bonding
%K Electrostatic force
%K Theory of plate and shell
%K Silicon
%K Glass<br>静电封接
%K 静电力
%K 板壳理论
%K 硅
%K 玻璃
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=A41E57881791CD518C6281677D340D23&yid=BBCD5003575B2B5F&vid=BCA2697F357F2001&iid=B31275AF3241DB2D&sid=8DDBA6455F2E3ECF&eid=66D0A4667FE1A38D&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=3