%0 Journal Article
%T CONTROL AND UTILIZATION OF DEFECTS IN SILICON SUBSTRATES<br>硅衬底中缺陷的控制和利用
%A Xu Kang
%A Wang Weiling
%A Shi Zunlan Luo Guichang
%A He Dezhan
%A Shao Haiwen
%A <br>许康
%A 王为林
%A 史遵兰
%A 罗桂昌
%A 何德湛
%A 邵海文
%J 电子与信息学报
%D 1988
%I 
%X Some experimental results are reported and discussed. The n+p junction leakage currents and the MOS generation lifetimes of wafers pretreated by the 1G method can be improved by 1-3 and 1-2 orders of magnetitute respectively, while the yields of diodes mode from silicon wafers pretreated by the chlorine oxidation gettring are approximately 3 times of those untreated. It is suggested that a combination of 2 or more defect control methods are necessary to meet the increasingly stringent demands of silicon substrates' quality required for LSI, VLSI circuits.
%K Semiconductor technology
%K Si substrate
%K Control and ntilization of defects
%K intrinsic gettering
%K Chlorine oxidation getiering
%K High temperature Na annealing<br>半导体工艺
%K 硅衬底
%K 缺陷控制和利用
%K 氧本征吸收
%K 加氯氧化预处理
%K 高温氮气预处理。
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=C09DFF43D8CCDFCD&yid=0702FE8EC3581E51&vid=F3090AE9B60B7ED1&iid=38B194292C032A66&sid=69E4C201C13601F9&eid=03E56C113B4E5A88&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=0&reference_num=17