%0 Journal Article
%T STUDY ON DISTRIBUTION CHARACTERISTICS OF EL2 IN UNDOPED LEC SI GaAs<br>非有意掺杂LEC SI GaAs中EL2分布特性的研究
%A Yang Ruixia
%A Fu Jun
%A Li Guangping
%A <br>杨瑞霞
%A 付濬
%A 李光平
%J 电子与信息学报
%D 1995
%I 
%X The changes in the concentration and distribution of EL2 in undoped LEC SI GaAs caused by various annealing conditions were measured. The distribution of dislocation and precipitation of As were also measured for analyzing these changes. The origin of the inhomogeneity of EL2 distribution and the mechanism which improves the homogeneity of EL2 distribution by annealing are discussed on the basis of the experimental results.
%K EL2
%K Dislocation
%K Precipitation of As
%K GaAs concentration distribution<br>EL2
%K 位错
%K AS沉淀
%K 浓度分布
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=EFC0377B03BD8D0EF4BBB548AC5F739A&aid=1274F4FC15AFE1B93C1F93D726AE9AED&yid=BBCD5003575B2B5F&vid=BCA2697F357F2001&iid=CA4FD0336C81A37A&sid=08805F9252973BA4&eid=C3BF5C58156BEDF0&journal_id=1009-5896&journal_name=电子与信息学报&referenced_num=1&reference_num=18